Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate

ABSTRACT

A method and apparatus for removing conductive material from a microelectronic substrate. In one embodiment, a support member supports a microelectronic substrate relative to a material removal medium, which can include first and second electrodes and a polishing pad. One or more electrolytes are disposed between the electrodes and the microelectronic substrate to electrically link the electrodes to the microelectronic substrate. The electrodes are then coupled to a source of varying current that electrically removes the conductive material from the substrate. The microelectronic substrate and/or the electrodes can be moved relative to each other to position the electrodes relative to a selected portion of the microelectronic substrate, and/or to polish the microelectronic substrate. The material removal medium can remove gas formed during the process from the microelectronic substrate and/or the electrodes. The medium can also have different first and second electrical characteristics to provide different levels of electrical coupling to different regions of the microelectronic substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation-in-part of U.S. applicationSer. No. 09/651,779 (attorney docket number 108298515US), titled“Methods and Apparatus for Removing Conductive Material From aMicroelectronic Substrate,” filed Aug. 30, 2000, and U.S. ApplicationSer. No. ______ (attorney docket number 108298515US1), titled “Methodsand Apparatus for Electrical, Mechanical and/or Chemical Removal ofConductive Material From a Microelectronic Substrate,” filedconcurrently herewith, and U.S. Application Ser. No. ______ (attorneydocket number 108298515US2), titled “Microelectronic Substrate HavingConductive Material With Blunt Cornered Apertures, and AssociatedMethods for Removing Conductive Material,” filed concurrently herewith,all incorporated herein in their entireties by reference.

TECHNICAL FIELD

This invention relates to methods and apparatuses for removingconductive material from microelectronic substrates.

BACKGROUND

Microelectronic substrates and substrate assemblies typically include asemiconductor material having features, such as memory cells, that arelinked with conductive lines. The conductive lines can be formed byfirst forming trenches or other recesses in the semiconductor material,and then overlaying a conductive material (such as a metal) in thetrenches. The conductive material is then selectively removed to leaveconductive lines extending from one feature in the semiconductormaterial to another.

Electrolytic techniques have been used to both deposit and removemetallic layers from semiconductor substrates. For example, analternating current can be applied to a conductive layer via anintermediate electrolyte to remove portions of the layer. In onearrangement, shown in FIG. 1, a conventional apparatus 60 includes afirst electrode 20 a and a second electrode 20 b coupled to a currentsource 21. The first electrode 20 a is attached directly to a metalliclayer 11 of a semiconductor substrate 10 and the second electrode 20 bis at least partially immersed in a liquid electrolyte 31 disposed onthe surface of the metallic layer 11 by moving the second electrodedownwardly until it contacts the electrolyte 31. A barrier 22 protectsthe first electrode 20 a from direct contact with the electrolyte 31.The current source 21 applies alternating current to the substrate 10via the electrodes 20 a and 20 b and the electrolyte 31 to removeconductive material from the conductive layer 11. The alternatingcurrent signal can have a variety of wave forms, such as those disclosedby Frankenthal et al. in a publication entitled, “Electroetching ofPlatinum in the Titanium-Platinum-Gold Metallization on SiliconIntegrated Circuits” (Bell Laboratories), incorporated herein in itsentirety by reference.

One drawback with the arrangement shown in FIG. 1 is that it may not bepossible to remove material from the conductive layer 11 in the regionwhere the first electrode 20 a is attached because the barrier 22prevents the electrolyte 31 from contacting the substrate 10 in thisregion. Alternatively, if the first electrode 20 a contacts theelectrolyte in this region, the electrolytic process can degrade thefirst electrode 20 a. Still a further drawback is that the electrolyticprocess may not uniformly remove material from the substrate 10. Forexample, “islands” of residual conductive material having no directelectrical connection to the first electrode 20 a may develop in theconductive layer 11. The residual conductive material can interfere withthe formation and/or operation of the conductive lines. and it may bedifficult or impossible to remove with the electrolytic process unlessthe first electrode 20 a is repositioned to be coupled to such“islands.”

One approach to addressing some of the foregoing drawbacks is to attacha plurality of first electrodes 20 a around the periphery of thesubstrate 10 to increase the uniformity with which the conductivematerial is removed. However, islands of conductive material may stillremain despite the additional first electrodes 20 a. Another approach isto form the electrodes 20 a and 20 b from an inert material, such ascarbon, and remove the barrier 22 to increase the area of the conductivelayer 11 in contact with the electrolyte 31. However, such inertelectrodes may not be as effective as more reactive electrodes atremoving the conductive material, and the inert electrodes may stillleave residual conductive material on the substrate 10.

FIG. 2 shows still another approach to addressing some of the foregoingdrawbacks in which two substrates 10 are partially immersed in a vessel30 containing the electrolyte 31. The first electrode 20 a is attachedto one substrate 10 and the second electrode 20 b is attached to theother substrate 10. An advantage of this approach is that the electrodes20 a and 20 b do not contact the electrolyte. However, islands ofconductive material may still remain after the electrolytic process iscomplete, and it may be difficult to remove conductive material from thepoints at which the electrodes 20 a and 20 b are attached to thesubstrates 10.

International Application PCT/US00/08336 (published as WO/00/59682)discloses an apparatus having a first chamber for applying a conductivematerial to a semiconductor wafer, and a second chamber for removingconductive material from the semiconductor wafer by electropolishing orchemical-mechanical polishing. The second chamber includes an anodehaving a paint roller configuration with a cylindrical mechanical padthat contacts both an electrolyte bath and the face of the wafer as theanode and the wafer rotate about perpendicular axes. A cathode, whichcan include a conductive liquid isolated from the electrolytic bath, iselectrically coupled to an edge of the wafer. One drawback with thisdevice is that it, too, can leave islands of residual conductivematerial on the wafer.

Another drawback with some conventional devices is that they may notadequately control gas bubbles that evolve during the electrolyticprocess. These bubbles can collect on the electrode and/or themicroelectronic substrate and can interfere with the uniform removal ofmaterial from the substrate. Still further, conventional electrolyticprocesses may not provide adequate control over the rate at whichmaterial is removed from the substrate, or the location on the substratefrom which the material is removed.

SUMMARY

The present invention is directed toward methods in apparatuses forremoving conductive materials from microelectronic substrates. A methodin accordance with one embodiment of the invention includes spacingfirst and second conductive electrodes apart from the microelectronicsubstrate. The method can further include disposing an electrolytebetween the microelectronic substrate and both the first and secondelectrodes, with both the first and second electrodes in fluidcommunication with the electrolyte. At least part of the conductivematerial is removed from the microelectronic substrate by passing avarying current through at least one of the first and second electrodeswhile the electrodes are spaced apart from the conductive material ofthe substrate. The method can further include removing gas from a regionbetween the microelectronic substrate and at least one of the electrodeswhile the conductive material is removed from the microelectronicsubstrate. In a further aspect of the invention, the microelectronicsubstrate can be engaged with a polishing surface of a polishing pad andat least one of the microelectronic substrate and the polishing pad canbe moved relative to the other while the varying current is passedthrough the conductive material.

A method in accordance with another aspect of the invention includesaligning a first portion of the microelectronic substrate with a firstportion of a material removal medium having first electricalcharacteristics. The method can further include aligning a secondportion of the microelectronic substrate with a second portion of thematerial removal medium having second electrical characteristicsdifferent than the first electrical characteristics. The conductivematerial can be engaged with a polishing surface of the material removalmedium and at least a portion of the electrically conductive materialcan be removed from the microelectronic substrate by passing a varyingelectrical current through the conductive material while engaging theconductive material with the material removal medium and moving at leastone of the substrate and medium relative to the other.

The invention is also directed toward an apparatus for removingconductive material from a microelectronic substrate. In one aspect ofthe invention, the apparatus can include a support member having atleast one engaging surface to support a microelectronic substrate. Amaterial removal medium is positioned proximate to the support member.The material removal medium can include a first electrode and a secondelectrode positioned to be spaced apart from the microelectronicsubstrate when the microelectronic substrate is supported by the supportmember. At least one of the first and second electrodes is coupleable toa source of varying electrical current. The material removal medium canfurther include a gas removal surface positioned to remove gas from aregion proximate to the microelectronic substrate and/or at least one ofthe first and second electrodes during operation.

In another aspect of the invention, the material removal medium caninclude a polishing surface positioned to engage the microelectronicsubstrate when the substrate is supported by the support member. Atleast one of the medium and the support member can be movable relativeto the other and the medium can include a first region with a firstelectrical characteristic and a second region with a second electricalcharacteristic different than the first electrical characteristic. Thefirst region can be aligned with a first portion of the microelectronicsubstrate and the second region can be aligned with a second portion ofthe microelectronic substrate when the polishing surface is engaged withthe microelectronic substrate. First and second electrodes arepositioned proximate to the polishing surface with at least one of theelectrodes being coupleable to a source of varying electrical current.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a partially schematic, side elevational view of an apparatusfor removing conductive material from a semiconductor substrate inaccordance with the prior art.

FIG. 2 is a partially schematic side, elevational view of anotherapparatus for removing conductive material from two semiconductorsubstrates in accordance with the prior art.

FIG. 3 is a partially schematic, side elevational view of an apparatushaving a support member and a pair of electrodes for removing conductivematerial from a microelectronic substrate in accordance with anembodiment of the invention.

FIG. 4 is a partially schematic, side elevational view of an apparatusfor removing conductive material and sensing characteristics of themicroelectronic substrate from which the material is removed inaccordance with another embodiment of the invention.

FIG. 5 is a partially schematic, side elevational view of an apparatusthat includes two electrolytes in accordance with still anotherembodiment of the invention.

FIG. 6 is a partially schematic, plan view of a substrate adjacent to aplurality of electrodes in accordance with still further embodiments ofthe invention.

FIG. 7 is a cross-sectional, side elevational view of an electrode and asubstrate in accordance with yet another embodiment of the invention.

FIG. 8A is a partially schematic, isometric view of a portion of asupport for housing electrode pairs in accordance with still anotherembodiment of the invention.

FIGS. 8B-8C are isometric views of electrodes in accordance with stillfurther embodiments of the invention.

FIG. 9 is a partially schematic, side elevational view of an apparatusfor both planarizing and electrolytically processing microelectronicsubstrates in accordance with yet another embodiment of the invention.

FIG. 10 is a partially schematic, partially exploded isometric view of aplanarizing pad and a plurality of electrodes in accordance with stillanother embodiment of the invention.

FIG. 11 is a partially schematic, side elevational view of an apparatusfor both planarizing and electrolytically processing microelectronicsubstrates in accordance with still another embodiment of the invention.

FIGS. 12A-B schematically illustrate a circuit and waveform forelectrolytically processing a microelectronic substrate in accordancewith yet another embodiment of the invention.

FIG. 13 is a partially schematic, side elevational view of an apparatusfor both mechanically and electrolytically processing microelectronicsubstrates in accordance with yet another embodiment of the invention.

FIGS. 14A-14C schematically illustrate material removal media inaccordance with still further embodiments of the invention.

FIG. 15 is a partially schematic, side elevational view of an apparatushaving a pressurized housing for both mechanically and electrolyticallyprocessing microelectronic substrates in accordance with still anotherembodiment of the invention.

FIG. 16 is a partially schematic, side elevational view of an apparatushaving an ultrasonic transducer and a polishing pad with channels forremoving gas during mechanical and electrolytic processing ofmicroelectronic substrates in accordance with another embodiment of theinvention.

FIGS. 17A-17E schematically illustrate material removal media havingspatially varying electrical characteristics in accordance with yetanother embodiment of the invention.

FIG. 18 is a partially schematic, side elevational view of an apparatusfor delivering a plurality of electrolytic fluids during planarizing andelectrolytically processing microelectronic substrates in accordancewith yet another embodiment of the invention.

DETAILED DESCRIPTION

The present disclosure describes methods and apparatuses for removingconductive materials from a microelectronic substrate and/or substrateassembly used in the fabrication of microelectronic devices. Manyspecific details of certain embodiments of the invention are set forthin the following description and in FIGS. 3-18 to provide a thoroughunderstanding of these embodiments. One skilled in the art, however,will understand that the present invention may have additionalembodiments, or that the invention may be practiced without several ofthe details described below.

FIG. 3 is a partially schematic, side elevational view of an apparatus160 for removing conductive material from a microelectronic substrate orsubstrate assembly 110 in accordance with an embodiment of theinvention. In one aspect of this embodiment, the apparatus 160 includesa vessel 130 containing an electrolyte 131, which can be in a liquid ora gel state. As used herein, the terms electrolyte and electrolyticfluid refer generally to electrolytic liquids and gels. Structures influid communication with electrolytic fluids are accordingly in fluidcommunication with electrolytic liquids or gels.

The microelectronic substrate 110 has an edge surface 112 and two facesurfaces 113. A support member 140 supports the microelectronicsubstrate 110 relative to the vessel 130 so that a conductive layer 111on at least one of the face surfaces 113 of the substrate 110 contactsthe electrolyte 131. The conductive layer 111 can include metals such asplatinum, tungsten, tantalum, gold, copper, or other conductivematerials. In another aspect of this embodiment, the support member 140is coupled to a substrate drive unit 141 that moves the support member140 and the substrate 110 relative to the vessel 130. For example, thesubstrate drive unit 141 can translate the support member 140 (asindicated by arrow “A”) and/or rotate the support member 140 (asindicated by arrow “B”)

The apparatus 160 can further include a first electrode 120 a and asecond electrode 120 b (referred to collectively as electrodes 120)supported relative to the microelectronic substrate 110 by a supportmember 124. In one aspect of this embodiment, the support arm 124 iscoupled to an electrode drive unit 123 for moving the electrodes 120relative to the microelectronic substrate 110. For example, theelectrode drive unit 123 can move the electrodes toward and away fromthe conductive layer 111 of the microelectronic substrate 110, (asindicated by arrow “C”), and/or transversely (as indicated by arrow “D”)in a plane generally parallel to the conductive layer 111.Alternatively, the electrode drive unit 123 can move the electrodes inother fashions, or the electrode drive unit 123 can be eliminated whenthe substrate drive unit 141 provides sufficient relative motion betweenthe substrate 110 and the electrodes 120.

In either embodiment described above with reference to FIG. 3, theelectrodes 120 are coupled to a current source 121 with leads 128 forsupplying electrical current to the electrolyte 131 and the conductivelayer 111. In operation, the current source 121 supplies an alternatingcurrent (single phase or multiphase) to the electrodes 120. The currentpasses through the electrolyte 131 and reacts electrochemically with theconductive layer 111 to remove material (for example, atoms or groups ofatoms) from the conductive layer 111. The electrodes 120 and/or thesubstrate 110 can be moved relative to each other to remove materialfrom selected portions of the conductive layer 111, or from the entireconductive layer 111.

In one aspect of an embodiment of the apparatus 160 shown in FIG. 3, adistance D₁ between the electrodes 120 and the conductive layer 111 isset to be smaller than a distance D₂ between the first electrode 120 aand the second electrode 120 b. Furthermore, the electrolyte 131generally has a higher resistance than the conductive layer 111.Accordingly, the alternating current follows the path of leastresistance from the first electrode 120 a, through the electrolyte 131to the conductive layer 111 and back through the electrolyte 131 to thesecond electrode 120 b, rather than from the first electrode 120 adirectly through the electrolyte 131 to the second electrode 120 b.Alternatively, a low dielectric material (not shown) can be positionedbetween the first electrode 120 a and the second electrode 120 b todecouple direct electrical communication between the electrodes 120 thatdoes not first pass through the conductive layer 111.

One feature of an embodiment of the apparatus 160 shown in FIG. 3 isthat the electrodes 120 do not contact the conductive layer 111 of thesubstrate 110. An advantage of this arrangement is that it can eliminatethe residual conductive material resulting from a direct electricalconnection between the electrodes 120 and the conductive layer 111,described above with reference to FIGS. 1 and 2. For example, theapparatus 160 can eliminate residual conductive material adjacent to thecontact region between the electrodes and the conductive layer becausethe electrodes 120 do not contact the conductive layer 111.

Another feature of an embodiment of the apparatus 160 described abovewith reference to FIG. 3 is that the substrate 110 and/or the electrodes120 can move relative to the other to position the electrodes 120 at anypoint adjacent to the conductive layer 111. An advantage of thisarrangement is that the electrodes 120 can be sequentially positionedadjacent to every portion of the conductive layer to remove materialfrom the entire conductive layer 111. Alternatively, when it is desiredto remove only selected portions of the conductive layer 111, theelectrodes 120 can be moved to those selected portions, leaving theremaining portions of the conductive layer 111 intact.

FIG. 4 is a partially schematic, side elevational view of an apparatus260 that includes a support member 240 positioned to support thesubstrate 110 in accordance with another embodiment of the invention. Inone aspect of this embodiment, the support member 240 supports thesubstrate 110 with the conductive layer 111 facing upwardly. A substratedrive unit 241 can move the support member 240 and the substrate 110, asdescribed above with reference to FIG. 3. First and second electrodes220 a and 220 b are positioned above the conductive layer 111 and arecoupled to a current source 221. A support member 224 supports theelectrodes 220 relative to the substrate 110 and is coupled to anelectrode drive unit 223 to move the electrodes 220 over the surface ofthe support conductive layer 111 in a manner generally similar to thatdescribed above with reference to FIG. 3.

In one aspect of the embodiment shown in FIG. 4, the apparatus 260further includes an electrolyte vessel 230 having a supply conduit 237with an aperture 238 positioned proximate to the electrodes 220.Accordingly, an electrolyte 231 can be disposed locally in an interfaceregion 239 between the electrodes 220 and the conductive layer 111,without necessarily covering the entire conductive layer 111. Theelectrolyte 231 and the conductive material removed from the conductivelayer 111 flow over the substrate 110 and collect in an electrolytereceptacle 232. The mixture of electrolyte 231 and conductive materialcan flow to a reclaimer 233 that removes most of the conductive materialfrom the electrolyte 231. A filter 234 positioned downstream of thereclaimer 233 provides additional filtration of the electrolyte 231 anda pump 235 returns the reconditioned electrolyte 231 to the electrolytevessel 230 via a return line 236.

In another aspect of the embodiment shown in FIG. 4, the apparatus 260can include a sensor assembly 250 having a sensor 251 positionedproximate to the conductive layer 111, and a sensor control unit 252coupled to the sensor 251 for processing signals generated by the sensor251. The control unit 252 can also move the sensor 251 relative to thesubstrate 110. In a further aspect of this embodiment, the sensorassembly 250 can be coupled via a feedback path 253 to the electrodedrive unit 223 and/or the substrate drive unit 24 1. Accordingly, thesensor 251 can determine which areas of the conductive layer 111 requireadditional material removal and can move the electrodes 220 and/or thesubstrate 110 relative to each other to position the electrodes 220 overthose areas. Alternatively, (for example, when the removal process ishighly repeatable), the electrodes 220 and/or the substrate 110 can moverelative to each other according to a predetermined motion schedule.

The sensor 251 and the sensor control unit 252 can have any of a numberof suitable configurations. For example, in one embodiment, the sensor251 can be an optical sensor that detects removal of the conductivelayer 111 by detecting a change in the intensity, wavelength or phaseshift of the light reflected from the substrate 110 when the conductivematerial is removed. Alternatively, the sensor 251 can emit and detectreflections of radiation having other wavelengths, for example, x-rayradiation. In still another embodiment, the sensor 251 can measure achange in resistance or capacitance of the conductive layer 111 betweentwo selected points. In a further aspect of this embodiment, one or bothof the electrodes 220 can perform the function of the sensor 251 (aswell as the material removal function described above), eliminating theneed for a separate sensor 251. In still further embodiments, the sensor251 can detect a change in the voltage and/or current drawn from thecurrent supply 221 as the conductive layer 111 is removed.

In any of the embodiments described above with reference to FIG. 4, thesensor 251 can be positioned apart from the electrolyte 231 because theelectrolyte 231 is concentrated in the interface region 239 between theelectrodes 220 and the conductive layer 111. Accordingly, the accuracywith which the sensor 251 determines the progress of the electrolyticprocess can be improved because the electrolyte 231 will be less likelyto interfere with the operation of the sensor 251. For example, when thesensor 251 is an optical sensor, the electrolyte 231 will be less likelyto distort the radiation reflected from the surface of the substrate 110because the sensor 251 is positioned away from the interface region 239.

Another feature of an embodiment of the apparatus 260 described abovewith reference to FIG. 4 is that the electrolyte 231 supplied to theinterface region 239 is continually replenished, either with areconditioned electrolyte or a fresh electrolyte. An advantage of thisfeature is that the electrochemical reaction between the electrodes 220and the conductive layer 111 can be maintained at a high and consistentlevel.

FIG. 5 is a partially schematic, side elevational view of an apparatus360 that directs alternating current to the substrate 110 through afirst electrolyte 331 a and a second electrolyte 331 b. In one aspect ofthis embodiment, the first electrolyte 331 a is disposed in two firstelectrolyte vessels 330 a, and the second electrolyte 331 b is disposedin a second electrolyte vessel 330 b. The first electrolyte vessels 330a are partially submerged in the second electrolyte 331 b. The apparatus360 can further include electrodes 320, shown as a first electrode 320 aand a second electrode 320 b, each coupled to a current supply 321 andeach housed in one of the first electrolyte vessels 330 a.Alternatively, one of the electrodes 320 can be coupled to ground. Theelectrodes 320 can include materials such as silver, platinum, copperand/or other materials, and the first electrolyte 331 a can includesodium chloride, potassium chloride, copper sulfate and/or otherelectrolytes that are compatible with the material forming theelectrodes 320.

In one aspect of this embodiment, the first electrolyte vessels 330 ainclude a flow restrictor 322, such as a permeable isolation membraneformed from Teflon™, sintered materials such as sintered glass, quartzor sapphire, or other suitable porous materials that allow ions to passback and forth between the first electrolyte vessels 330 a and thesecond electrolyte vessel 330 b, but do not allow the second electrolyte330 b to pass inwardly toward the electrodes 320 (for example, in amanner generally similar to a salt bridge). Alternatively, the firstelectrolyte 331 a can be supplied to the electrode vessels 330 a from afirst electrolyte source 339 at a pressure and rate sufficient to directthe first electrolyte 331 a outwardly through the flow restrictor 322without allowing the first electrolyte 331 a or the second electrolyte330 b to return through the flow restrictor 322. In either embodimentthe second electrolyte 331 b remains electrically coupled to theelectrodes 320 by the flow of the first electrolyte 331 a through therestrictor 322.

In one aspect of this embodiment, the apparatus 360 can also include asupport member 340 that supports the substrate 110 with the conductivelayer 111 facing toward the electrodes 320. For example, the supportmember 340 can be positioned in the second electrolyte vessel 330 b. Ina further aspect of this embodiment, the support member 340 and/or theelectrodes 320 can be movable relative to each other by one or moredrive units (not shown).

One feature of an embodiment of the apparatus 360 described above withreference to FIG. 5 is that the first electrolyte 331 a can be selectedto be compatible with the electrodes 320. An advantage of this featureis that the first electrolyte 331 a can be less likely than conventionalelectrolytes to degrade the electrodes 320. Conversely, the secondelectrolyte 331 b can be selected without regard to the effect it has onthe electrodes 320 because it is chemically isolated from the electrodes320 by the flow restrictor 322. Accordingly, the second electrolyte 331b can include hydrochloric acid or another agent that reactsaggressively with the conductive layer 111 of the substrate 110.

FIG. 6 is a top plan view of the microelectronic substrate 110positioned beneath a plurality of electrodes having shapes andconfigurations in accordance with several embodiments of the invention.For purposes of illustration, several different types of electrodes areshown positioned proximate to the same microelectronic substrate 110;however, in practice, electrodes of the same type can be positionedrelative to a single microelectronic substrate 110.

In one embodiment, electrodes 720 a and 720 b can be grouped to form anelectrode pair 770 a, with each electrode 720 a and 720 b coupled to anopposite terminal of a current supply 121 (FIG. 3). The electrodes 770 aand 770 b can have an elongated or strip-type shape and can be arrangedto extend parallel to each other over the diameter of the substrate 110.The spacing between adjacent electrodes of an electrode pair 370 a canbe selected to direct the electrical current into the substrate 110, asdescribed above with reference to FIG. 3.

In an alternate embodiment, electrodes 720 c and 720 d can be grouped toform an electrode pair 770 b, and each electrode 720 c aid 720 d canhave a wedge or “pie” shape that tapers inwardly toward the center ofthe microelectronic substrate 110. In still another embodiment, narrow,strip-type electrodes 720 e and 720 f can be grouped to form electrodepairs 770 c, with each electrode 720 e and 720 f extending radiallyoutwardly from the center 113 of the microelectronic substrate 110toward the periphery 112 of the microelectronic substrate 110.

In still another embodiment, a single electrode 720 g can extend overapproximately half the area of the microelectronic substrate 110 and canhave a semicircular platform shape. The electrode 720 g can be groupedwith another electrode (not shown) having a shape corresponding to amirror image of the electrode 720 g, and both electrodes can be coupledto the current source 121 to provide alternating current to themicroelectronic substrate in any of the manners described above withreference to FIGS. 3-5.

FIG. 7 is a partially schematic, cross-sectional side elevational viewof a portion of the substrate 110 positioned beneath the electrode 720 cdescribed above with reference to FIG. 6. In one aspect of thisembodiment, the electrode 720 c has an upper surface 771 and a lowersurface 772 opposite the upper surface 771 and facing the conductivelayer 111 of the substrate 110. The lower surface 772 can taperdownwardly from the center 113 of the substrate 110 toward the perimeter112 of the substrate 110 in one aspect of this embodiment to give theelectrode 720 c a wedge-shaped profile. Alternatively, the electrode 720c can have a plate-type configuration with the lower surface 772positioned as shown in FIG. 7 and the upper surface 771 parallel to thelower surface 772. One feature of either embodiment is that theelectrical coupling between the electrode 720 c and the substrate 110can be stronger toward the periphery 112 of the substrate 110 thantoward the center 113 of the substrate 110. This feature can beadvantageous when the periphery 112 of the substrate 110 moves relativeto the electrode 720 c at a faster rate than does the center 113 of thesubstrate 110, for example, when the substrate 110 rotates about itscenter 113. Accordingly, the electrode 720 c can be shaped to accountfor relative motion between the electrode and the substrate 110.

In other embodiments, the electrode 720 c can have other shapes. Forexample, the lower surface 772 can have a curved rather than a flatprofile. Alternatively, any of the electrodes described above withreference to FIG. 6 (or other electrodes having shapes other than thoseshown in FIG. 6) can have a sloped or curved lower surface. In stillfurther embodiments, the electrodes can have other shapes that accountfor relative motion between the electrodes and the substrate 110.

FIG. 8A is a partially schematic view of an electrode support 473 forsupporting a plurality of electrodes in accordance with anotherembodiment of the invention. In one aspect of this embodiment, theelectrode support 473 can include a plurality of electrode apertures474, each of which houses either a first electrode 420 a or a secondelectrode 420 b. The first electrodes 420 a are coupled through theapertures 474 to a first lead 428 a and the second electrodes 420 b arecoupled to a second lead 428 b. Both of the leads 428 a and 428 b arecoupled to a current supply 421. Accordingly, each pair 470 of first andsecond electrodes 420 a and 420 b defines part of a circuit that iscompleted by the substrate 110 and the electrolyte(s) described abovewith reference to FIGS. 3-5.

In one aspect of this embodiment, the first lead 428 a can be offsetfrom the second lead 428 b to reduce the likelihood for short circuitsand/or capacitive coupling between the leads. In a further aspect ofthis embodiment, the electrode support 473 can have a configurationgenerally similar to any of those described above with reference toFIGS. 1-7. For example, any of the individual electrodes (e.g., 320 a,320 c, 320 e, or 320 g) described above with reference to FIG. 6 can bereplaced with an electrode support 473 having the same overall shape andincluding a plurality of apertures 474, each of which houses one of thefirst electrodes 420 a or the second electrodes 420 b.

In still a further aspect of this embodiment, the electrode pairs 470shown in FIG. 8A can be arranged in a manner that corresponds to theproximity between the electrodes 420 a, 420 b and the microelectronicsubstrate 110 (FIG. 7), and/or the electrode pairs 470 can be arrangedto correspond to the rate of relative motion between the electrodes 420a, 420 b and the microelectronic substrate 110. For example, theelectrode pairs 470 can be more heavily concentrated in the periphery112 of the substrate 110 or other regions where the relative velocitybetween the electrode pairs 470 and the substrate 110 is relatively high(see FIG. 7). Accordingly the increased concentration of electrode pairs470 can provide an increased electrolytic current to compensate for thehigh relative velocity. Furthermore, the first electrode 420 a and thesecond electrode 420 b of each electrode pair 470 can be relativelyclose together in regions (such as the periphery 112 of the substrate110) where the electrodes are close to the conductive layer 111 (seeFIG. 7) because the close proximity to the conductive layer 111 reducesthe likelihood for direct electrical coupling between the firstelectrode 420 a and the second electrode 420 b. In still a furtheraspect of this embodiment, the amplitude, frequency and/or waveformshape supplied to different electrode pairs 470 can vary depending onfactors such as the spacing between the electrode pair 470 and themicroelectronic substrate 110, and the relative velocity between theelectrode pair 470 and the microelectronic substrate 110.

FIGS. 8B-8C illustrate electrodes 820 (shown as first electrodes 820 aand second electrodes 820 b) arranged concentrically in accordance withstill further embodiments of the invention. In one embodiment shown inFIG. 8B, the first electrode 820 a can be positioned concentricallyaround the second electrode 820 b, and a dielectric material 829 can bedisposed between the first electrode 820 a and the second electrode 820b. The first electrode 820 a can define a complete 360° are around thesecond electrode 820 b, as shown in FIG. 8B, or alternatively, the firstelectrode 820 a can define an arc of less than 360°.

In another embodiment, shown in FIG. 8C, the first electrode 820 a canbe concentrically disposed between two second electrodes 820 b, with thedielectric material 829 disposed between neighboring electrodes 820. Inone aspect of this embodiment, current can be supplied to each of thesecond electrodes 820 b with no phase shifting. Alternatively, thecurrent supplied to one second electrode 820 b can be phase-shiftedrelative to the current supplied to the other second electrode 820 b. Ina further aspect of the embodiment, the current supplied to each secondelectrode 820 b can differ in characteristics other than phase, forexample. amplitude.

One feature of the electrodes 820 described above with respect to FIGS.8B-8C is that the first electrode 820 a can shield the secondelectrode(s) 820 b from interference from other current sources. Forexample, the first electrode 820 a can be coupled to ground to shieldthe second electrodes 820 b. An advantage of this arrangement is thatthe current applied to the substrate 110 (FIG. 7) via the electrodes 820can be more accurately controlled.

FIG. 9 schematically illustrates an apparatus 560 for chemically,mechanically and/or electrolytically processing the microelectronicsubstrate 110 in accordance with an embodiment of the invention. In oneaspect of this embodiment, the apparatus 560 has a support table 580with a top-panel 581 at a workstation where an operative portion “W” ofa polishing pad 582 is positioned. The top-panel 581 is generally arigid plate to provide a flat, solid surface to which a particularsection of the polishing pad 582 may be secured during material removalprocesses.

The apparatus 560 can also have a plurality of rollers to guide,position and hold the polishing pad 582 over the top-panel 581. Therollers can include a supply roller 583, first and second idler rollers584 a and 584 b, first and second guide rollers 585 a and 585 b, and atake-up roller 586. The supply roller 583 carries an unused orpre-operative portion of the polishing pad 582, and the take-up roller583 carries a used or post-operative portion of the polishing pad 582.Additionally, the first idler roller 584 a and the first guide roller585 a can stretch the polishing pad 582 over the top-panel 581 to holdthe polishing pad 582 stationary during operation. A motor (not shown)drives at least one of the supply roller 583 and the take-up roller 586to sequentially advance the polishing pad 582 across the top-panel 581.Accordingly, clean pre-operative sections of the polishing pad 582 maybe quickly substituted for used sections to provide a consistent surfacefor polishing and/or cleaning the substrate 110.

The apparatus 560 can also have a carrier assembly 590 that controls andprotects the substrate 110 during the material removal processes. Thecarrier assembly 590 can include a substrate holder 592 to pick up, holdand release the substrate 110 at appropriate stages of the materialremoval process. The carrier assembly 590 can also have a support gantry594 carrying a drive assembly 595 that can translate along the gantry594. The drive assembly 595 can have an actuator 596, a drive shaft 597coupled to the actuator 596, and an arm 598 projecting from the driveshaft 597. The arm 598 carries the substrate holder 592 via a terminalshaft 599 such that the drive assembly 595 orbits the substrate holder592 about an axis E-E (as indicated by arrow “R₁”). The terminal shaft599 may also rotate the substrate holder 592 about its central axis F-F(as indicated by arrow “R₂”).

In one embodiment, the polishing pad 582 and a planarizing solution 587define at least a portion of a material removal medium that mechanicallyand/or chemically-mechanically removes material from the surface of thesubstrate 110. The polishing pad 582 used in the apparatus 560 can be afixed-abrasive polishing pad having abrasive particles that are fixedlybonded to a suspension medium. Accordingly, the planarizing solution 587can be a “clean solution” without abrasive particles because theabrasive particles are fixedly distributed across a polishing surface588 of the polishing pad 582. In other applications, the polishing pad582 may be a non-abrasive pad without abrasive particles, and theplanarizing solution 587 can be a slurry with abrasive particles andchemicals to remove material from the substrate 110.

To remove material from the substrate 110 with the apparatus 560, thecarrier assembly 590 presses the face 113 of the substrate 110 againstthe polishing surface 588 of the polishing pad 582 in the presence ofthe planarizing solution 587. The drive assembly 595 then orbits thesubstrate holder 592 about the axis E-E and optionally rotates thesubstrate holder 592 about the axis F-F to translate the substrate 110across the planarizing surface 588. As a result, the abrasive particlesand/or the chemicals in the material removal medium remove material fromthe surface of the substrate 110 in a chemical and/orchemical-mechanical planarization (CMP) process. Accordingly, in oneembodiment, the polishing pad 582 can smooth the substrate 110 byremoving rough features projecting from the conductive layer 111 of thesubstrate 110.

In a further aspect of this embodiment, the apparatus 560 can include anelectrolyte supply vessel 530 that delivers an electrolyte to theplanarizing surface 588 of the polishing pad 582 with a conduit 537, asdescribed in greater detail with reference to FIG. 10. The apparatus 560can further include a current supply 521 coupled to the support table580 and/or the top-panel 581 to supply an electrical current toelectrodes positioned in the support table 580 and/or the top-panel 581.Accordingly, the apparatus 560 can electrolytically remove material fromthe conductive layer 111 in a manner similar to that described abovewith reference to FIGS. 1-8C.

In one aspect of an embodiment of the apparatus 560 described above withreference to FIG. 9, material can be sequentially removed from theconductive layer 111 of the substrate 110 first by an electrolyticprocess and then by a CMP process. For example, the electrolytic processcan remove material from the conductive layer 111 in a manner thatroughens the conductive layer 111. After a selected period ofelectrolytic processing time has elapsed, the electrolytic processingoperation can be halted and additional material can be removed via CMPprocessing. Alternatively, the electrolytic process and the CMP processcan be conducted simultaneously. In either of these processingarrangements, one feature of an embodiment of the apparatus 560described above with reference to FIG. 9 is that the same apparatus 560can planarize the substrate 110 via CMP and remove material from thesubstrate 110 via an electrolytic process. An advantage of thisarrangement is that the substrate 110 need not be moved from oneapparatus to another to undergo both CMP and electrolytic processing.

Another advantage of an embodiment of the apparatus 560 described abovewith reference to FIG. 9 is that the processes, when used in conjunctionwith each other, are expected to remove material from the substrate 110more quickly and accurately than some conventional processes. Forexample, as described above, the electrolytic process can removerelatively large amounts of material in a manner that roughens themicroelectronic substrate 110, and the planarizing process can removematerial on a finer scale in a manner that smoothes and/or flattens themicroelectronic substrate 110.

FIG. 10 is a partially exploded, partially schematic isometric view of aportion of the apparatus 560 described above with reference to FIG. 9.In one aspect of an embodiment shown in FIG. 10, the top-panel 581houses a plurality of electrode pairs 570, each of which includes afirst electrode 520 a and a second electrode 520 b. The first electrodes520 a are coupled to a first lead 528 a and the second electrodes 520 bare coupled to a second lead 528 b. The first and second leads 528 a and528 b are coupled to the current source 521 (FIG. 9). In one aspect ofthis embodiment, the first electrode 520 a can be separated from thesecond electrodes 520 b by an electrode dielectric layer 529 a thatincludes Teflon™ or another suitable dielectric material. The electrodedielectric layer 529 a can accordingly control the volume and dielectricconstant of the region between the first and second electrodes 520 a and520 b to control electrical coupling between the electrodes.

The electrodes 520 a and 520 b can be electrically coupled to themicroelectronic substrate 110 (FIG. 9) by the polishing pad 582. In oneaspect of this embodiment, the polishing pad 582 is saturated with anelectrolyte 531 supplied by the supply conduits 537 through apertures538 in the top-panel 581 just beneath the polishing pad 582.Accordingly, the electrodes 520 a and 520 b are selected to becompatible with the electrolyte 531. In an alternate arrangement, theelectrolyte 531 can be supplied to the polishing pad 582 from above (forexample, by disposing the electrolyte 531 in the planarizing liquid 587)rather than through the top-panel 581. Accordingly, the polishing pad582 can include a pad dielectric layer 529 b positioned between thepolishing pad 582 and the electrodes 520 a and 520 b. When the paddielectric layer 529 b is in place, the electrodes 520 a and 520 b areisolated from physical contact with the electrolyte 531 and canaccordingly be selected from materials that are not necessarilycompatible with the electrolyte 531.

In either embodiment, the electrodes 520 a and 520 b can be in fluidcommunication with each other and the conductive layer 111 via a commonvolume of electrolyte 531. Each electrode 520 a, 520 b can be moredirectly electrically coupled to the conductive layer 111 (FIG. 9) thanto the other electrode so that electrical current passes from oneelectrode through the conductive layer 111 to the other electrode.

In one aspect of an embodiment of the apparatus shown in FIG. 10, theelectrodes 520 a and 520 b face toward the face surface 113 (FIG. 9) ofthe microelectronic substrate 110, with the polishing pad 582 interposedbetween the electrodes 520 a and 520 b and the face surface 113. As themicroelectronic substrate 110 and the electrodes 520 a and 520 b moverelative to each other, the electrodes can electrically couple to atleast a substantial portion of the face surface 113. Accordingly, thelikelihood for forming electrically isolated “islands” in the conductivelayer 111 (FIG. 9) at the face surface 113 can be reduced when comparedto conventional devices. Alternatively, if the apparatus includes onlytwo electrodes, each configured to face toward about one-half of theface surface 113 (in a manner generally similar to that described abovewith reference to electrode 220 g of FIG. 6), then the electrodes canalso electrically couple to at least a substantial portion of the facesurface 113.

In any of the embodiments described above with reference to FIG. 10, thepolishing pad 582 can provide several additional advantages over someconventional electrolytic arrangements. For example, the polishing pad582 can uniformly separate the electrodes 520 a and 520 b from themicroelectronic substrate 110 (FIG. 9), which can increase theuniformity with which the electrolytic process removes material from theconductive layer 111 (FIG. 9). The polishing pad 582 can also haveabrasive particles 589 for planarizing the microelectronic substrate 110in the manner described above with reference to FIG. 9. Furthermore, thepolishing pad 582 can filter carbon or other material that erodes fromthe electrodes 520 a and 520 b to prevent the electrode material fromcontacting the microelectronic substrate 110. Still further, thepolishing pad 582 can act as a sponge to retain the electrolyte 531 inclose proximity to the microelectronic substrate 110.

FIG. 11 is a partially schematic, cross-sectional side elevational viewof a rotary apparatus 660 for mechanically, chemically and/orelectrolytically processing the microelectronic substrate 110 inaccordance with another embodiment of the invention. In one aspect ofthis embodiment, the apparatus 660 has a generally circular platen ortable 680, a carrier assembly 690, a polishing pad 682 positioned on thetable 680, and a planarizing liquid 687 on the polishing pad 682. Thepolishing pad 682 can be a fixed abrasive polishing pad or,alternatively, the planarizing liquid 687 can be a slurry having asuspension of abrasive elements and the polishing pad 682 can be anon-abrasive pad. A drive assembly 695 rotates (arrow “G”) and/orreciprocates (arrow “H”) the platen 680 to move the polishing pad 682during planarization.

The carrier assembly 690 controls and protects the microelectronicsubstrate 110 during the material removal process. The carrier assembly690 typically has a substrate holder 692 with a pad 694 that holds themicroelectronic substrate 110 via suction. A drive assembly 696 of thecarrier assembly 690 typically rotates and/or translates the substrateholder 692 (arrows “I” and “J,” respectively). Alternatively, thesubstrate holder 692 may include a weighted, free-floating disk (notshown) that slides over the polishing pad 682.

To planarize the microelectronic substrate 110 with the apparatus 660 inone embodiment, the carrier assembly 690 presses the microelectronicsubstrate 110 against a polishing surface 688 of the polishing pad 682.The platen 680 and/or the substrate holder 692 then move relative to oneanother to translate the microelectronic substrate 110 across thepolishing surface 688. As a result, the abrasive particles in thepolishing pad 682 and/or the chemicals in the planarizing liquid 687remove material from the surface of the microelectronic substrate 110.

The apparatus 660 can also include a current source 621 coupled withleads 628 a and 628 b to one or more electrode pairs 670 (one of whichis shown in FIG. 11). The electrode pairs 670 can be integrated with theplaten 680 in generally the same manner with which the electrodes 520 aand 520 b (FIG. 10) are integrated with the top panel 581 (FIG. 10).Alternatively, the electrode pairs 670 can be integrated with thepolishing pad 682. In either embodiment, the electrode pairs 670 caninclude electrodes having shapes and configurations generally similar toany of those described above with reference to FIGS. 3-10 toelectrolytically remove conductive material from the microelectronicsubstrate 110. The electrolytic process can be carried out before,during or after the CMP process, as described above with reference toFIG. 9.

FIG. 12A is a schematic circuit representation of some of the componentsdescribed above with reference to FIG. 10. The circuit analogy can alsoapply to any of the arrangements described above with reference to FIGS.3-11 or below with reference to FIGS. 13-18. As shown schematically inFIG. 12A, the current source 521 is coupled to the first electrode 520 aand the second electrode 520 b with leads 528 a and 528 b, respectively.The electrodes 520 a and 520 b are coupled to the microelectronicsubstrate 110 with the electrolyte 531 in an arrangement that can berepresented schematically by two sets of parallel capacitors andresistors. A third capacitor and resistor schematically indicates thatthe microelectronic substrate 110 “floats” relative to ground or anotherpotential.

In one aspect of an embodiment shown in FIG. 12A, the current source 521can be coupled to an amplitude modulator 522 that modulates the signalproduced by the current source 521, as is shown in FIG. 12B.Accordingly, the current source 521 can generate a high-frequency wave804, and the amplitude modulator 522 can superimpose a low-frequencywave 802 on the high-frequency wave 804. For example, the high-frequencywave 804 can include a series of positive or negative voltage spikescontained within a square wave envelope defined by the low-frequencywave 802. Each spike of the high-frequency wave 804 can have arelatively steep rise time slope to transfer charge through thedielectric to the electrolyte, and a more gradual fall time slope. Thefall time slope can define a straight line, as indicated byhigh-frequency wave 804, or a curved line, as indicated byhigh-frequency wave 804 a. In other embodiments, the high-frequency wave804 and the low-frequency wave 802 can have other shapes depending, forexample, on the particular characteristics of the dielectric materialand electrolyte adjacent to the electrodes 420, the characteristics ofthe substrate 110, and/or the target rate at which material is to beremoved from the substrate 110.

An advantage of this arrangement is that the high frequency signal cantransmit the required electrical energy from the electrodes 520 a and520 b to the microelectronic substrate 110, while the low frequencysuperimposed signal can more effectively promote the electrochemicalreaction between the electrolyte 531 and the conductive layer 111 of themicroelectronic substrate 110. Accordingly, any of the embodimentsdescribed above with reference to FIGS. 3-11 can include an amplitudemodulator in addition to a current source.

FIG. 13 is a partially schematic, side elevational view of an apparatus960 for electrically, chemically and/or mechanically removing at leastsome of a conductive material 111 from the substrate 110. In one aspectof this embodiment, the apparatus 960 can include a support member 940that supports the substrate 110 with the face surface 113 and theconductive layer 111 facing upwardly. In a further aspect of thisembodiment, the support member 940 can include a substrate drive unit941 that translates (as indicated by arrow “A”) and/or rotates (asindicated by arrow “B”) the support member 940 and the substrate 110.

The apparatus 960 can further include a material removal medium 930 thatremoves at least part of the conductive material 111 from the substrate110. In one aspect of this embodiment, the material removal medium 930can include first and second electrodes 920 a, 920 b supported by anelectrode support 937 and coupled to an electrical potential source 921,such as an alternating current source or a pulsed direct current source.The material removal medium 930 can further include a polishing pad 982having a first portion 982 a adjacent to the first electrode 920 a and asecond portion 982 b adjacent to the second electrode 920 b. Thematerial removal medium 930 can move relative to the support member 940(and the microelectronic substrate 110) as indicated by arrows “H” and“G.”

A fluid 931 can be disposed between the microelectronic substrate 110and a polishing surface 988 of the polishing pad 982 to facilitateelectrical and/or chemical-mechanical removal of the conductive material111. For example, the fluid 931 can include an electrolyte thatelectrically couples the first and second electrodes 920 a, 920 b to theconductive material 111 on at least a substantial portion of the facesurface 113, as was generally described above. The fluid 931 can alsoinclude chemicals and/or abrasive elements to chemically and/ormechanically remove at least some of the conductive material 111 fromthe substrate 110. Alternatively, the polishing pad 982 (rather than thefluid 931) can include abrasive elements. Accordingly, the combinationof electrical and chemical-mechanical removal techniques in oneembodiment of the apparatus 960 can provide the user with an increasedlevel of control over the rate at which the conductive material 111 isremoved from the substrate 110, the amount of conductive material 111removed, and/or the region of the microelectronic substrate 110 fromwhich the conductive material 111 is removed.

FIGS. 14A-14C illustrate apparatuses configured to receive gasesgenerated during the electrical and/or chemical-mechanical processdescribed above and conduct the gases away from a region proximate tothe microelectronic substrate 110 and/or the electrodes. For example, anapparatus 960 a shown in FIG. 14A can include a material removal medium930 a having an electrode support 937 with first and second electrodes920 c and 920 d. The material removal medium 930 a can further includepolishing pad portions 982 (shown as a first polishing pad portion 982 cadjacent the first electrode 920 c, and a second polishing pad portion982 d adjacent the second electrode 920 d). In one aspect of thisembodiment, the polishing pad portions 982 c, 982 d can be generallynon-porous and can cover less than the entire downwardly facing surfacearea of each of the electrodes 920 c, 920 d. Accordingly, an exposedsurface 927 of each of the electrodes 920 c, 920 d directly faces thesubstrate 110. These exposed surfaces 927 can include channels 925defined by channel surfaces 926 that can collect gas bubbles and conductthe gas bubbles away from the region proximate to the substrate 110and/or the electrodes 920 c, 920 d.

In a further aspect of this embodiment, the electrodes 920 c, 920 d canbe separated from each other by a gap 928. The gap can reduce oreliminate direct electrical coupling between the two electrodes, so thatthe current instead flows from one electrode through the conductivematerial 111 of the microelectronic substrate 110 to the otherelectrode. Furthermore, the gap 928 can operate in addition to, or inlieu of the channels 925 to conduct gas bubbles away from the electrodes920 c, 920 d and/or the microelectronic substrate 110. In still afurther aspect of this embodiment, the electrode support 937 can rotate(as indicated by arrow “G”) at a rate sufficient to move the gas bubblesradially outwardly by centrifugal force.

Another feature of the apparatus 960 a shown in FIG. 14A is that thetype and placement of the polishing pad portions 982 c, 982 d cancontrol the electrical coupling between the electrodes 920 c, 920 d andthe microelectronic substrate 110. For example, the polishing padportions 982 c, 982 d can be generally non-porous so that only theexposed portions of the electrodes 920 c, 920 d are electrically coupledto the substrate 110 via the fluid 931. Alternatively, the polishing padportions 982 c, 982 d can be porous or partially porous to allow someelectrical coupling between the electrodes 920 c, 920 d and thesubstrate 110 in regions where the polishing pad portions 982 c, 982 dare interposed between the microelectronic substrate 110 and theelectrodes. The degree of coupling through the polishing pad portions982 c, 982 d can be less than the degree of electrical coupling betweenthe exposed portions of the electrodes and the microelectronic substrate110. Further examples of arrangements for controlling the electricalcoupling between the electrodes and the microelectronic substrate 110are described below with reference to FIGS. 17A-18.

FIG. 14B illustrates an apparatus 960 b that includes a material removalmedium 930 b having first and second electrodes 920 e, 920 f andcorresponding first and second polishing pad portions 982 e, 982 f. Eachof the polishing pad portions 982 e, 982 f is porous and accordinglyincludes pores 983 and passages 984 extending from the pores 983upwardly to the electrodes 920 e, 920 f. The electrodes 920 e, 920 f caninclude downwardly facing channels 925 a in fluid communication with thepassages 984. Accordingly, the passages 984 can allow gas bubbles torise from the microelectronic substrate 110 through the polishing padportions 982 to the channels 925 a, where the gas is collected andremoved. When the passages 984 are filled with the fluid 931, thepassages 984 can also provide an electrical link between the electrodes920 e, 920 f and the microelectronic substrate 110. The fluid 931 caneither be provided directly on the surface of the microelectronicsubstrate 110 and then wick up through the pores 983, or alternatively,the fluid 931 can be pumped through the passages 984 from above, as willbe described in greater detail below with reference to FIG. 15.

FIG. 14C illustrates an apparatus 960 c having a material removal medium930 c that includes first and second electrodes 920 g, 920 h andcorresponding first and second polishing pad portions 982 g and 982 h.In one aspect of this embodiment, the polishing pad portions 982 g, 982h can be porous to conduct gas bubbles away from the microelectronicsubstrate 110, as described above with references to FIG. 14B. Inanother aspect of this embodiment, the electrodes 920 g, 920 h caninclude downwardly facing channels 925 b positioned to collect the gasbubbles and inclined to conduct the gas bubbles away from the electrodes920 g, 920 h. The material removal medium 930 can include an electrodesupport 937 c having canted lower surfaces 938 to orient the passages925 b at a selected inclination angle. In one aspect of this embodiment,a downwardly facing surface 927 of each of the electrodes 920 g, 920 his also inclined. The inclination angle can be shallow to reduce thedifference in separation distance between the microelectronic substrate110 and the electrodes at the center of the material removal medium 930c relative to the separation distance at the outer periphery of thematerial removal medium 930 c. Alternatively, the inclination angle canbe steeper to deliberately reduce the electrical coupling between theelectrodes 920 g, 920 h and the microelectronic substrate 110 at theperiphery of the material removal medium 930 and thereby control theelectrical coupling between the electrodes and the microelectronicsubstrate. In still a further alternate embodiment, the channels 925 bcan be inclined upwardly (as shown in FIG. 14C), although a lowersurface 927 c of the electrodes 920 g, 920 h is horizontal, as indicatedin dashed lines in FIG. 14C.

FIG. 15 is a partially schematic, side-elevational view of an apparatus1060 having a material removal medium 1030 that can controllably exertpressure on the microelectronic substrate 110 while recycling a portionof the process fluid and removing gas from a region proximate to themicroelectronic substrate 110. For example, in one aspect of thisembodiment, the material removal medium 1030 can include a pressurizedhousing 1038 that supports a pliable polishing pad 1082 against themicroelectronic substrate 110. The housing 1038 can also support firstand second electrodes 1020 a and 1020 b proximate to the polishing pad1082. In one aspect of this embodiment, the apparatus 1060 can furtherinclude a pressure conduit 1097 connected between a pressure source 1096and the housing 1038. When a pressurized fluid (such as air or anothergas) is introduced into the housing 1038 via the pressure conduit 1097,it can exert a downward force on the polishing pad 1082 that canincrease the rate at which material is removed from the microelectronicsubstrate 110. In a further aspect of this embodiment, the pressureapplied to the polishing pad 1082 can be uniform over the entire extentof the polishing pad, as illustrated in FIG. 15. Alternatively, fluid atdifferent pressures can be applied to different portions of thepolishing pad 1082 to further control the mechanical removal of materialfrom the microelectronic substrate 110.

In another aspect of an embodiment of the apparatus 1060 shown in FIG.15, the electrodes 1020 a, 1020 b can be separated from the polishingpad 1082 to define a passage 1091. The passage 1091 can be coupled via afluid supply conduit 1090 to a pump 1095 that supplies process fluid1031 to the material removal medium 1030. In still a further aspect ofthis embodiment, the fluid 1031 can split into two streams, one of which“weeps” through the perforations 1084 in the polishing pad 1082, and oneof which passes adjacent to the electrodes 1020 a, 1020 b. The fluidstream flowing adjacent to the electrodes 1020 a, 1020 b can cool theelectrodes 1020 a, 1020 b. This fluid stream can also entrain and removegas bubbles that accumulate against the downwardly facing surfaces ofthe electrodes 1020 a, 1020 b, and/or gas bubbles that may rise throughthe perforated polishing pad 1082. The fluid passing adjacent to theelectrodes 1020 a, 1020 b can be collected in a return conduit 1092 andwithdrawn from the housing 1038. In one aspect of this embodiment, avacuum source 1093 can increase the rate at which the fluid 1031 iswithdrawn from the housing 1038. The fluid can be treated in a recyclingdevice 1094 that can withdraw entrained gas from the fluid 1031 and/orprovide makeup fluid before returning the fluid 1031 to the pump 1095for another cycle.

One feature of an embodiment of the apparatus described above withreference to FIG. 15 is that the pressure source 1096 can control themechanical pressure applied by the polishing pad 1082 to themicroelectronic substrate 110 and the fluid 1031 while the electrodes1020 a, 1020 b control an electrochemical interaction with theconductive material 111 of the microelectronic substrate 110 with theelectrodes 1020 a, 1020 b. In one aspect of this embodiment, thepressure applied to the polishing pad 1082 can be independent of theflow rate of the fluid 1031. Alternatively, the fluid supply conduit1090 can pressurize the housing 1038 while at the same time supplyingfluid to the polishing pad 1082 and the region between the polishing pad1082 and the electrodes 1020 a, 1020 b. Accordingly, the pressureconduit 1097 and the pressure source 1096 can be eliminated in thisembodiment. In either embodiment, an advantage of this arrangement isthat by controlling both the mechanical pressure on the substrate 110and the electromechanical coupling with the substrate 110, the apparatus1060 can control the rate and manner with which the conductive material111 is removed more precisely than can some conventional devices.

FIG. 16 is a partially schematic, side elevational view of an apparatus1160 for removing conductive material 111 from the microelectronicsubstrate 110 in accordance with another embodiment of the invention. Inone aspect of this embodiment, the apparatus 1160 can include asubstrate support 1110 that supports the microelectronic substrate 110with the conductive material 111 facing downwardly against a polishingpad 1182. A processing fluid 1131 is disposed on the polishing pad 1182to promote removing material from the microelectronic substrate 110, asdescribed above.

In one aspect of this embodiment, the apparatus 1160 can further includepairs of first and second electrodes 1120 a, 1120 b positioned beneathand!or integrated with the polishing pad 1182. Each electrode 1120 a,1120 b can have a surface 1127 facing toward the microelectronicsubstrate 110 and can be adjacent to a divider 1128 that electricallyisolates the first electrode 1120 a from the second electrode 1120 b.The apparatus 1160 can further include a conduit 1138 that provides theprocessing fluid 1131 to the polishing pad 1182 where it can travelupwardly through pores or passages (not shown in FIG. 16) in thepolishing pad 1182 to a polishing surface 1188. The polishing surface1188 can include channels 1189 that allow gas bubbles to collect andmove laterally during processing, thereby limiting the time during whichthe bubbles will collect against the microelectronic substrate 110 wherethey can reduce the efficiency of the electrical and/or chemical-mechanical material removal processes.

In a further aspect of this embodiment, the apparatus 1160 can includean ultrasonic energy emitter 1112 in fluid communication with thematerial removal fluid 1131. The ultrasonic energy emitter 1112 cantransmit ultrasonic energy into the fluid 1131, which can increase therate and/or efficiency with which gas bubbles are removed from theregion proximate to the microelectronic substrate 110.

FIGS. 17A-17E illustrate apparatuses that include material removal mediahaving spatially varying electrical characteristics in accordance withfurther embodiments of the invention. FIG. 17A illustrates a materialremoval medium 1230 a that includes an electrode support 1237 supportinga first electrode 1220 a and a second electrode 1220 b proximate to themicroelectronic substrate 110. The material removal medium 1230 a canfurther include a polishing pad 1282 a disposed adjacent to theelectrodes 1220 a, 1220 b. In one aspect of this embodiment, thepolishing pad 1282 a can include a plurality of regions 1284 a-1284 d,one or more of which has electrical characteristics different than thoseof a neighboring region. The regions 1284 b-1284 d can be disposedannularly about the region 1284 a in one embodiment or alternatively,the regions can have other patterns or arrangements in otherembodiments. In any of these embodiments, adjacent regions 1284 a-1284 dcan have different dielectric constants and/or conductivities tospatially vary the degree of electrical coupling between the electrodes1220 a, 1220 b and the microelectronic substrate 110. Accordingly, theimpedance of the circuit or circuits formed by the electrodes 1220 a,1220 b and the conductive material 111 can vary over the surface of themicroelectronic substrate 110, providing a variation in the rate atwhich material is electrically removed from the conductive material 111.Alternatively, the spatially varying electrical characteristics cancorrect for factors (such as varying relative velocity between thesubstrate 110 and the polishing pad 1282 a) that would otherwise resultin a spatially non-uniform material removal rate.

FIG. 17B illustrates a material removal medium 1230 b having a porouspolishing pad 1282 b in accordance with another embodiment of theinvention. In one aspect of this embodiment, the polishing pad 1282 bcan include pores 1283 and passages 1284 that provide fluidcommunication for a processing fluid 1231 to electrically couple theelectrodes 1220 a and 1220 b to the conductive material 111 of themicroelectronic substrate 110. In a further aspect of this embodiment,the porosity of the polishing pad 1282 b can vary in a continuous mannerfrom one region to another. For example, the porosity can decrease in aradial outward direction. In other embodiments, the porosity can changein other manners to provide a different level of electrical couplingover different portions of the microelectronic substrate 110.

FIG. 17C illustrates a material removal medium 1230 c that includes apolishing pad 1282 c having three concentric regions 1285 a-1285 c, eachwith a different but constant porosity. In one aspect of thisembodiment, the porosity of the polishing pad 1282 c can decrease in aradial, outward direction, and in other embodiments, the porosity canchange in other manners. In still further embodiments, the polishing pad1282 can have more or fewer than three distinct regions.

FIG. 17D illustrates a material removal medium 1230 d having a polishingpad 1282 d with porous and nonporous regions. For example, the polishingpad 1282 d can include a porous region 1286 a toward the center of thematerial removal medium 1230 d, and a nonporous region 1286 b positionedconcentrically about the porous region 1286 a. Accordingly, theelectrodes 1220 a, 1220 h can be electrically coupled with themicroelectronic substrate 110 only in the central region of the materialremoval medium 1230 d, while the polishing pad 1282 d can mechanicallyremove material over the entire contact area between the materialremoval medium 1230 d and the substrate 110. In an alternativearrangement, shown in FIG. 17E, a material removal medium 1230 eincludes a polishing pad 1282 e having uniform porosity. The polishingpad 1282 e can be attached to a mask 1287 that precludes or at leastlimits electrical coupling between the electrodes 1220 a, 1220 b and themicroelectronic substrate 110 in regions where the mask 1287 isinterposed between the microelectronic substrate 110 and the polishingpad 1282 e.

FIG. 18 is a partially schematic, side-elevational view of an apparatus1360 having a material removal medium 1330 that controls electricalcoupling to the microelectronic substrate 110 by disposing differentelectrolytic fluids over different portions of the microelectronicsubstrate 110. Accordingly, the material removal medium 1330 can includefirst, second and third electrolyte supply conduits 1338 a-1338 ccoupled to corresponding concentric regions 1382 a-1382 c of thepolishing pad 1382. The concentric regions 1382 a-1382 c can beseparated by nonpermeable barriers 1328. Within each region 1382 a-1382c are positioned first and second electrodes 1320 a, 1320 b that areelectrically coupled to the conductive material 111 of themicroelectronic substrate 110 via an electrolytic fluid 1331 in thepores of the polishing pad 1382.

In one aspect of this embodiment, a first electrolytic fluid supplied tothe first supply conduit 1338 a can be different than a secondelectrolytic fluid supplied to the second conduit 1338 b, and both thefirst and second electrolytic fluids can be different than a thirdelectrolytic fluid supplied to the third supply conduit 1338 c. Forexample, the first, second, and third electrolytic fluids can havedifferent chemical compositions and/or different concentrations of thesame chemical agent or agents. In either embodiment, the impedance of anelectrical circuit that includes the first region 1382 a and theconductive material 111 can be different than the impedance of anelectrical circuit that includes the second region 1382 h and theconductive material 111. Accordingly, the degree to which the electrodes1320 a, 1320 b are electrically coupled to the microelectronic substrate110 can vary over the face of the microelectronic substrate 110,providing control over the rate at which material are electricallyremoved from the microelectronic substrate.

From the foregoing, it will be appreciated that, although specificembodiments of the invention have been described herein for purposes ofillustration, various modifications may be made without deviating fromthe spirit and scope of the invention. For example, some or all of thetechniques described above in the context of a web-format apparatus(such as the one shown in FIG. 9) can be applied was well to a rotaryapparatus. The rate at which material is removed from themicroelectronic substrate can be controlled by controllingcharacteristics of the electrical signal applied to the microelectronicsubstrate, the electrolytic fluid adjacent to the microelectronicsubstrate, and/or the polishing pad in contact with the microelectronicsubstrate. For example, characteristics of the electrical current caninclude current, voltage, waveform and/or frequency. Characteristics ofthe electrolytic fluid can include chemical composition, pH, and/orionic strength. Characteristics of the polishing pad can include the padconfiguration (such as shape, porosity, hardness, etc.). The rate atwhich material is removed can also be controlled by controlling therelative velocity and/or normal force between the polishing pad and themicroelectronic substrate. Accordingly, the invention is not limitedexcept as by the appended claims.

1-35. (Canceled)
 36. A method for removing electrically conductivematerial from a microelectronic substrate, comprising: aligning a firstportion of the microelectronic substrate with a first portion of amaterial removal medium having first electrical characteristics andaligning a second portion of the microelectronic substrate with a secondportion of the material removal medium having second electricalcharacteristics different than the first electrical characteristics;engaging the conductive material with a polishing surface of thematerial removal medium; and removing at least a portion of theelectrically conductive material from the microelectronic substrate bypassing a varying electrical current through the conductive materialwhile engaging the conductive material with the material removal mediumand moving at least one of the microelectronic substrate and thematerial removal medium relative to the other.
 37. The method of claim36 wherein the microelectronic substrate has an edge surface and a facesurface and wherein the method further comprises: interposing thepolishing surface between the face surface and first and secondelectrodes; coupling at least one of the first and second electrodes toa source of electrical potential; and electrically coupling the firstand second electrodes to the face surface of the microelectronicsubstrate through the polishing surface of the polishing pad.
 38. Themethod of claim 36 wherein aligning the first and second portions of themicroelectronic substrate includes aligning the first portion of themicroelectronic substrate with the first portion of the material removalmedium having a first electrical characteristic and aligning the secondportion of the microelectronic substrate with the second portion of thematerial removal medium having a second electrical characteristicdifferent than the first electrical characteristic.
 39. The method ofclaim 38, further comprising selecting the first electricalcharacteristic to be a first conductivity and selecting the secondelectrical characteristic to be a second conductivity.
 40. The method ofclaim 38, further comprising selecting the first electricalcharacteristic to be a first dielectric constant and selecting thesecond electrical characteristic to be a second dielectric constant. 41.The method of claim 36, further comprising engaging the first portion ofthe microelectronic substrate with a first electrolytic fluid andengaging a second portion of the microelectronic substrate with a secondelectrolytic fluid different than the first electrolytic fluid.
 42. Themethod of claim 36, further comprising engaging the first portion of themicroelectronic substrate with a first electrolytic fluid having a firstchemical concentration and engaging a second portion of themicroelectronic substrate with a second electrolytic fluid having asecond chemical concentration different than the first chemicalconcentration.
 43. The method of claim 36, further comprising engagingthe first portion of the microelectronic substrate with a firstelectrolytic fluid having a first chemical composition and engaging asecond portion of the microelectronic substrate with a secondelectrolytic fluid having a second chemical composition different thanthe first chemical composition.
 44. The method of claim 36 wherein thefirst portion of the material removal medium has a first impedance andthe second portion of the material removal medium has a second impedancedifferent than the first impedance and wherein the method furtherincludes forming a first electrical circuit that includes the firstimpedance and forming a second electrical circuit that includes thesecond impedance.
 45. The method of claim 36 wherein the materialremoval medium includes a polishing pad having the polishing surface andat least one electrode disposed proximate to the polishing surface, andwherein the method includes aligning the first portion of themicroelectronic substrate to directly face at least one of theelectrodes without the polishing pad being interposed between the firstportion and the at least one electrode, and wherein the method furtherincludes aligning the second portion of the microelectronic substrate todirectly face a portion of the polishing pad positioned between at leastone of the electrodes and the microelectronic substrate.
 46. The methodof claim 36 wherein the material removal medium includes a polishing padhaving the polishing surface and at least one electrode positionedproximate to the polishing surface, the polishing pad having first poresdefining a first porosity and second pores defining a second porositydifferent than the first porosity, and wherein the method furthercomprises aligning the first portion of the microelectronic substratewith the first pores and aligning the second portion of themicroelectronic substrate with the second pores.
 47. The method of claim36 wherein the material removal medium includes a polishing pad havingthe polishing surface and at least one electrode positioned proximate tothe polishing surface, the polishing pad having a generally porousregion and a generally non-porous region, and wherein the method furthercomprises aligning the first portion of the microelectronic substratewith the generally porous region and aligning the second portion of themicroelectronic substrate with the generally non-porous region.
 48. Amethod for removing electrically conductive material from amicroelectronic substrate, comprising: aligning a first portion of themicroelectronic substrate with a first portion of a material removalmedium having first electrical characteristics and aligning a secondportion of the microelectronic substrate with a second portion of thematerial removal medium having second electrical characteristicsdifferent than the first electrical characteristics; and removing atleast part of the electrically conductive material from themicroelectronic substrate by passing a varying electrical currentthrough the material removal medium and the conductive material.
 49. Themethod of claim 48 wherein the microelectronic substrate has an edgesurface and a face surface and wherein the method further comprises:interposing a polishing surface between the face surface and first andsecond electrodes; coupling at least one of the first and secondelectrodes to the source of electrical potential; and electricallycoupling the first and second electrodes to the face surface of themicroelectronic substrate through the polishing surface of the polishingpad.
 50. The method of claim 48 wherein the part of the electricallyconductive material removed from the microelectronic substrate is afirst part, and wherein the material removal medium includes a polishingsurface, and wherein the method further comprises: engaging theconductive material with the polishing surface of the material removalmedium; and moving at least one of the polishing surface and themicroelectronic substrate relative to the other to remove a second partof the electrically conductive material.
 51. The method of claim 48wherein aligning the first and second portions of the microelectronicsubstrate includes aligning the first portion of the microelectronicsubstrate with the first portion of the material removal medium having afirst dielectric constant and aligning the second portion of themicroelectronic substrate with the second portion of the materialremoval medium having a second dielectric constant different than thefirst dielectric constant.
 52. The method of claim 48, furthercomprising engaging the first portion of the microelectronic substratewith a first electrolyte and engaging a second portion of themicroelectronic substrate with a second electrolyte different than thefirst electrolyte.
 53. The method of claim 48 wherein the materialremoval medium includes a polishing pad having a polishing surface andat least one electrode positioned proximate to the polishing surface,the polishing pad having first pores defining a first porosity andsecond pores defining a second porosity different than the firstporosity, and wherein the method further comprises aligning the firstportion of the microelectronic substrate with the first pores andaligning the second portion of the microelectronic substrate with thesecond pores.
 54. The method of claim 48 wherein the material removalmedium includes a polishing pad having a polishing surface and at leastone electrode positioned proximate to the polishing surface, thepolishing pad having a generally porous region and a generallynon-porous region, and wherein the method further comprises aligning thefirst portion of the microelectronic substrate with the generally porousregion and aligning the second portion of the microelectronic substratewith the generally non-porous region.
 55. A method for removingconductive material from a face surface of a microelectronic substrate,comprising: electrically coupling a source of varying current to theconductive material on the face surface by coupling first and secondelectrodes to the source of varying current and facing the first andsecond electrodes toward the face surface of the microelectronicsurface; engaging the conductive material with a polishing pad having apolishing surface and moving at least one of the microelectronicsubstrate and the polishing surface relative to the other; andcontrolling a rate and/or an amount of conductive material removed fromthe microelectronic substrate by controlling an interaction between thesource of varying current and the conductive material and independentlycontrolling an interaction between the polishing surface and theconductive material.
 56. The method of claim 55 wherein controlling anamount of conductive material removed includes aligning a first portionof the microelectronic substrate with a first region of the polishingsurface having a first dielectric constant and aligning a second portionof the microelectronic substrate with a second region of the polishingsurface having a second dielectric constant different than the firstdielectric constant.
 57. The method of claim 55 wherein controlling anamount of conductive material removed includes controlling a normalforce applied to the conductive material at an interface between theconductive material and the polishing surface.
 58. The method of claim55 wherein controlling an amount of conductive material removed includescontrolling an amount, ionic strength, and/or pH of an electrolyticfluid between the conductive material and an electrode coupled to thesource of varying current.
 59. The method of claim 55 whereincontrolling an amount of conductive material removed includescontrolling a voltage, current, waveform, and/or frequency of anelectrical signal applied to the microelectronic substrate.
 60. Themethod of claim 55 wherein controlling an amount of conductive materialremoved includes controlling a relative velocity between the polishingpad and the microelectronic substrate, controlling a normal forcebetween the polishing pad and the microelectronic substrate, and/orselecting a configuration of the polishing pad.
 61. The method of claim55, further comprising removing gas from a region proximate to themicroelectronic substrate.
 62. A method for removing electricallyconductive material from a face surface of a microelectronic substrate,comprising: engaging the conductive material with a first electrolyticfluid and a polishing surface of a material removal medium; removing atleast a first portion of the electrically conductive material from themicroelectronic substrate by passing a varying electrical current from afirst electrode facing the face surface, through the first electrolyticfluid and the first conductive material to a second electrode facing theface surface while engaging the first conductive material with thematerial removal medium and moving at least one of the microelectronicsubstrate and the material removal medium relative to the other;engaging the conductive material with a second electrolytic fluid andthe polishing surface of the material removal medium, the secondelectrolytic fluid being different than the first electrolytic fluid;and removing at least a second portion of the electrically conductivematerial from the microelectronic substrate by passing a varyingelectrical current from the first electrode facing the face surface,through the second electrolytic fluid and the second conductive materialto the second electrode facing the face surface while engaging thesecond conductive material with the material removal medium and movingat least one of the microelectronic substrate and the material removalmedium relative to the other.
 63. The method of claim 62, furthercomprising selecting the first electrolytic fluid to have a firstchemical concentration and selecting the second electrolytic fluid tohave a second chemical concentration different than the first chemicalconcentration.
 64. The method of claim 62, further comprising selectingthe first electrolytic fluid to have a first chemical composition andselecting the second electrolytic fluid to have a second chemicalcomposition different than the first chemical composition. 65-107.(Canceled)